Global Ferroelectric RAM Market 2016-2020

FeRAM(強誘電体メモリ)の世界市場2016-2020

◆タイトル:Global Ferroelectric RAM Market 2016-2020
◆商品コード:IRTNTR9182
◆調査・発行会社:Technavio (Infiniti Research Ltd.)
◆発行日:2016年8月29日
◆ページ数:66
◆資料形式:PDF / 英語
◆納品方法:Eメール(受注後24時間以内)
◆調査対象地域:グローバル
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【資料の概要】

当調査レポートでは、FeRAM(強誘電体メモリ)の世界市場について調査・分析し、エグゼクティブサマリー、市場概観、市場概観、業界の構造分析、FeRAM(強誘電体メモリ)の世界市場規模及び予測、地域別分析/市場規模、市場の成長要因、市場の課題、市場動向、競争状況などの情報をお届けいたします。

About Ferroelectric RAM
Ferroelectric random access memory (ferroelectric RAM) is a type of solid-state data storage memory which is a medium for computer-related applications. It is a non-volatile memory, which makes it different from the other types of RAM like DRAM that are used in personal computers. Memories are a part of application segment in ferroelectric films including microsystems, and high frequency components (electrical).

Technavio’s analysts forecast the global ferroelectric RAM market to grow at a CAGR of 6.4% during the period 2016-2020.

[Covered in this report]
The report covers the present scenario and the growth prospects of the global ferroelectric RAM market for 2016-2020. To calculate the market size, the report considers the revenue generated from shipment of F-RAM hardware and software.

The market is divided into the following segments based on geography:
• Americas
• APAC
• EMEA

Technavio’s report, global ferroelectric RAM market 2016-2020, has been prepared based on an in-depth market analysis with inputs from industry experts. The report covers the market landscape and its growth prospects over the coming years. The report also includes a discussion of the key vendors operating in this market.

[Key vendors]
• Cypress semiconductor
• Fujitsu
• IBM
• Texas Instruments

[Other prominent vendors]
• Infineon technologies AG
• LAPIS semiconductor
• Toshiba

[Market driver]
• Increasing demand in automotive applications
• For a full, detailed list, view our report

[Market challenge]
• Increasing complexity in RAM design
• For a full, detailed list, view our report

[Market trend]
• Growing need for high-speed memory devices
• For a full, detailed list, view our report

[Key questions answered in this report]
• What will the market size be in 2020 and what will the growth rate be?
• What are the key market trends?
• What is driving this market?
• What are the challenges to market growth?
• Who are the key vendors in this market space?
• What are the market opportunities and threats faced by the key vendors?
• What are the strengths and weaknesses of the key vendors?

※You can request one free hour of our analyst’s time when you purchase this market report. Details are provided within the report.

【資料の目次】

PART 01: Executive summary
• Highlights

PART 02: Scope of the report
• Market overview
• Top-vendor offerings

PART 03: Market research methodology
• Research methodology
• Economic indicators

PART 04: Introduction
• Key market highlights

PART 05: Current emerging memory technologies

PART 06: Supply chain

PART 07: Market landscape
• Market size and forecast
• Five force analysis

PART 08: Geographical segmentation
• Americas
• APAC
• EMEA
• CAGR comparison

PART 09: Market drivers
• Low power consumption
• Growing demand for FeRAM in automotive applications
• Increased adoption in smart cards
• Increased usage of FeRAM in medical applications

PART 10: Impact of drivers

PART 11: Market challenges
• Short data storage time
• Emergence of other new technologies
• High cost of production

PART 12: Impact of drivers and challenges

PART 13: Market trends
• Emergence of new FeRAM design using CMOS process
• Growing popularity of FeRAM-based smart meters
• Development of high-speed FeRAM

PART 14: Vendor landscape
• Competitive scenario
• Vendor landscape

PART 15: Appendix
• List of abbreviations

PART 16: Explore Technavio

[List of Exhibits]

Exhibit 01: Product offerings
Exhibit 02: Comparison of NOR and NAND flash memories
Exhibit 03: Classification of semiconductor memory
Exhibit 04: Market summary
Exhibit 05: Classification of current emerging memory technologies
Exhibit 06: Basic MRAM cell structure
Exhibit 07: Basic STT-MRAM
Exhibit 08: Basic architecture of FeRAM
Exhibit 09: Basic PCRAM cell structure
Exhibit 10: Basic RRAM cell structure
Exhibit 11: Structure of polymer memory device
Exhibit 12: Racetrack memory diagram with U-shaped magnetic nanowires
Exhibit 13: Comparison of emerging major non-volatile memory
Exhibit 14: Device industry value chain
Exhibit 15: Marketing and sales management
Exhibit 16: Global FeRAM market 2015-2020 ($ millions)
Exhibit 17: Five force analysis
Exhibit 18: Global FeRAM market segmentation by geography 2016-2020
Exhibit 19: Global FeRAM market segmentation by geography 2015-2020 ($ millions)
Exhibit 20: FeRAM market in Americas 2015-2020 ($ millions)
Exhibit 21: FeRAM market in APAC 2015-2020 ($ millions)
Exhibit 22: FeRAM market in EMEA 2015-2020 ($ millions)
Exhibit 23: CAGR comparison
Exhibit 24: Basic block diagram of EDR
Exhibit 25: Impact of drivers
Exhibit 26: Other new technologies
Exhibit 27: Impact of drivers and challenges
Exhibit 28: Global smart meter market by revenue 2015-2020 ($ billions)
Exhibit 29: Global smart meter market by shipments 2015-2020 (millions of units)
Exhibit 30: Opportunities in the coming years



【掲載企業】

Cypress semiconductor, Fujitsu, IBM, Texas Instruments, Infineon technologies AG, LAPIS semiconductor, Toshiba.

【資料のキーワード】

FeRAM(強誘電体メモリ)、自動車、ICカート、医療用途

【調査方法】

一次資料による調査(業界専門家、ベンダー、代理店、顧客等を対象にしたデプスインタビュー調査など)及び二次資料による調査(Technavio独自のプラットフォーム、産業書籍、企業報告書、ニュース記事、アナリストレポート、貿易協会、政府機関発行データなど)

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